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Silicon-on-insulator (SOI) platform allows highly-integrated photonic circuits with CMOS fabrication process. Hybrid integration technologies of Si and III–V materials have been developed in order to realize active functional devices [1,2]. Intersubband transition (ISBT) in a III–V semiconductor provides ultrafast cross-phase modulation (XPM) between TE probe light and TM pump light [3]. All-optical...
A 1.55 µm emitting tunable vertical cavity surface emitting laser (VCSEL) is fabricated, using an intracavity nematic liquid crystal layer. Half cavity VCSEL are realized on InP(001), based on quantum wells associated with broadband dielectric mirror, following by the insertion of a 3 µm thick liquid crystal layer in the cavity. Room temperature laser emission is obtained in the 1.5 µm wavelength...
We analytically investigate the dynamic behaviors of the proposed optical XNOR and AND logic gate devices, with an monolithically integrated highly stacked InAs quantum dots structure SOA fabricated with the strain compensation technique and ring resonators. The calculated results indicate that the optical logic device can operate the logic gate functions at 160Gb/s RZ signals with large eye opening,...
Employing either nitrogen or hydrogen as carrier gas, we investigated the successive development of the characteristic GaP(100) and InP(100) surface reconstructions during thermal induced phosphorus desorption of in the MOVPE reactor. The results differed significantly dependent on the MOVPE ambient, N2 versus H2, and the substrate type, GaP(100) versus InP(100). In addition to specifically ordered,...
In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35µm and the base contact is 0.3µm wide. The base and emitter contacts present an excellent contact resistivity. The current gain...
We have investigated the effect of different metal organic vapor phase epitaxy (MOVPE) preparation routes for the In0.53Ga0.47As/InP interface on the interface recombination velocity and its lateral interface homogeneity. The preparation routines in a MOVPE reactor were varied in order to initiate a lateral homogenous layer growth and to form the In-GaAs/InP interface as sharp as possible, which is...
Structural characteristics of uncapped InAs/InGaAsP dots were evaluated based on a simple approach using image processing of atomic-force micrographs. Height, mean area, ensemble density, and shape of the dots were determined. On this basis a systematic study of the effect of growth temperature and growth interruption as the main parameters that influence the formation of the dots was performed. With...
A room-temperature continuous-wave operation of a 1.3 µm wavelength transistor laser (TL) with p/n/p configuration was achieved using AlGaInAs/InP 5 quantum-well active region A threshold current (emitter current) of 17 mA was obtained for a stripe width of 1.8 µm and a cavity length of 500 µm, and it was controlled by the collector-base voltage. Even though the current gain was only 0.01, three terminal...
This paper describes the basic principles and the key building blocks of the regrowth-free multi-guide vertical integration platform in InP and reports the photonic integrated circuits for optical communications built on this platform.
The accuracy of the split-CV mobility extraction method is analyzed in implant-free, buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric through a “simulated experiment” procedure. The different error sources affecting the method accuracy are pointed out. As a result of these errors, the split-CV mobility can appreciably underestimate the actual channel mobility under on-state conditions.
To realize optical integrated circuits on LSI with membrane structure of III–V material, we have investigated GaInAsP wire waveguide instead of global electrical wire which will be the bottleneck of LSI performance limitation. This time, fabrication process and characteristics of GaInAsP wire waveguides on Si substrate by adhesive bonding using benzocyclobutene (BCB) were investigated. A good bonding...
The suitability of the compact model HICUM for modeling III-V HBTs is evaluated. For this purpose, a complete parameter extraction for HICUM/L0 is performed using single-transistor extraction routines. The suitability of some of these methods is discussed and the best available ones are identified. Model results are presented and compared with measurements. Good agreement is obtained demonstrating...
GaAs1−xBix/GaAs multiple quantum well (MQW) structures and GaAs1−xBix thin films (x< 0.109) grown on (001) GaAs substrates by molecular beam epitaxy have been structurally evaluated by transmission electron microscopy. In both cases, grown-in defects such as dislocations, dislocation loops, and precipitates, composition modulated structure, and ordered structure were not observed all. From...
We measured the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots (QD) structures. We examined the relationship between the sample temperature and PL peak wavelength. The polarization of the excitation light was changed from the TM mode to the TE mode. We compared relations of a shift of the PL peak wavelength to the excitation light power under TM mode and TE mode excitation. We considered...
Rapid thermal annealing (RTA) improves the photoluminescence (PL) efficiency of TlInGaAsN semiconductor alloys, but the blue-shift of PL peak wavelength occurs. TlInGaAsN thin films grown by gas-source molecular-beam epitaxy were investigated by X-ray photoelectron spectroscopy (XPS) to study the annealing-induced transformation of the atomic configurations. XPS analysis revealed that the dominant...
We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielectric/barrier interface and unintentional doping in the...
Hydrogen sensing characteristics of graphite-Pd(Pt)/InP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of ∼106 to 1000 ppm H2 in N2. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of...
The photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present an InP-based InGaAs Uni-traveling Carrier (UTC) PD designed and fabricated for high speed and high power applications. A UTC PD with a 40µ×5°m wave guide shows a 3dB bandwith up to 40GHz and photocurrents of up to 10mA without saturation in our measurement range.
We have developed the calculation technique using wafer's curvature and X-ray diffraction (XRD) pattern to analyze the structure of InGaAs/GaAsP multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE). Instead of using difficult and time consuming XRD reciprocal space mapping (RSM), the curvature can effectively supplement the uncertain information of MQWs obtained from XRD...
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