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Power dissipation is a main attention for designing complementary metal oxide semiconductor Very Large Scale Integration (VLSI) circuits in deep sub‐micron technology. Constant field device scaling leads to high transistor density, reduction in power supply, lower threshold voltage, and reduction in oxide thickness. This gives rise to short channel effects and increases the leakage currents causing...
Power dissipation, propagation delay and noise are major issues in digital circuit design. In this paper, a new leakage-tolerant domino circuit is presented which has lower power consumption and higher noise immunity without significant delay increment for 8 and 16 input OR gates are designed and simulated using existing and proposed techniques in FinFET technology. In this paper utilize the property...
Scaling down the circuits of complementary metal oxide semiconductor increases the leakage current. Input vector control is an extremely popular method for controlling leakage without using any technological modification. However, it is less effective for larger logic depth circuits.
Our study proposes a Worst Leakage State (WLS) free‐node algorithm based on gate replacement technique, in which, when...
Power consumption has become hurdle for recent IC design as technology scale down below 45nm. Aggressive nanoscaling of MOS transistor in process technology has advanced in chip density, but to achieve high performance and lower power consumption by continues scaling results in shorter channel effect and Lowering of Drain Induced Barrier Lowering (DIBL). To overcome from this situation double gate...
In Deep Sub-Micron (DSM) technology, leakage power dissipation consumes the substantial percentage of the total power dissipation and rises exponentially according to the International Technology Roadmap for Semiconductor (ITRS). Here a wide-ranging survey and analysis has been done for leakage reduction based on active as well as idle mode of operation. This paper proposes a novel approach, based...
There are several techniques available to control the leakage current in deep sub-micron technologies. One of the techniques is the Input Vector Control (IVC). By using IVC, leakage power consumption of a circuit can be minimized in the off state. In this paper, an algorithm has been given to calculate the best input vector that can be applied to the circuit (designed with 65nm technology transistors)...
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