The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents the digital control scheme of a single phase uninterruptible power supply (UPS). In order to obtain fast response in the current control, the authors propose the digital control scheme based on the instantaneous values. The inverter of the UPS is connected to the load in parallel to reduce the loss of the UPS. The controller is constructed by a DSP. The control schemes in all of...
High overload inverters were developed by using SiC devices for the first time, although its realization by using Si devices had been difficult because of Si's low maximum Tj. The newly developed 100 kVA overload SiC inverter provides an overload capability rate of 200 % and can supply 300 kVA for up to 3 seconds. Moreover, the volume was downsized to 1/7.5 of the previous inverter and the 150 hour...
High resistive SiC pin diodes with heavy electron irradiation are proposed for the turn-on snubber circuit as an alternative to the conventional resistor and diode. The inverter circuit was greatly miniaturized by mounting the high resistive SiC pin diode in a SiCGT (SiC commutated gate turn-off thyristor) module and using no heat sink for the resistor. Using this inverter circuit, stable 100 kVA...
A novel phenomena of VF degradation reduction, TEDREC phenomena, was found, which can reduce the degradation by increasing SiC device temperature. To realize safe and repeatable operation of degraded SiC devices and to achieve a drastic reduction in their cost, TEDREC method was developed by using the phenomena. A 180 kVA class SiC inverter was also developed by using the method, which is the largest...
A new measurement method of Tj (junction temperature ), TjDM, of a SiC device installed and operated in a circuit is proposed. Tj of a SiC device has been related to the turn-off waveforms and estimated by the time in the turn-off process. TjS of developed SiCGTs ( SiC Commutated Gate turn-off Thyristors ) under the high voltage half bridge inverter operation at 2 kHz are measured, and are confirmed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.