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In addition to its high mobility, the possibility of opening sizable bandgaps has made bilayer graphene (BLG) a promising candidate for many electronic and optoelectronic applications. Yet, the achievable bandgap (300 meV) is not sufficient to make BLG a candidate for high performance transistors. Vertical strain in conjunction with the vertical field can help to achieve a larger band gap in BLG....
Ultra-scaled SiGe nanowire FETs (NWFETs) are an attractive candidate in achieving faster p-type devices compared to Silicon. This work investigates the performance of SiGe nanowire FETs (NWFETs) using a Virtual Crystal Approximation (VCA) method based on an atomistic Tight-Binding (TB) model. The electronic structure calculation is self- consistently coupled to a 2D Poisson solver. The spatial charge...
Using an atomistic full-band quantum transport solver, we investigate the performances of vertical band-to-band tunneling FETs (TFETs) whose operation is based on the enhancement of the gate-induced drain leakage mechanism of MOSFETs, and we compare them to lateral p-i-n devices. Although the vertical TFETs offer larger tunneling areas and therefore larger on currents than their lateral counterparts,...
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