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In this paper, a 3-D NAND Flash memory array having multiple single-crystal Si nanowires is investigated. Device structure and fabrication process are described including the electrical isolation of stacked nanowires. Numerical simulation results focused on NAND Flash memory operation are delivered. Devices and array with stacked bit lines are fabricated, and memory characteristics such as program/erase...
We studied random telegraph noise (RTN) of n-type and p-type silicon nanowire transistors (SNWT) for the first time and derived accurate vertical and lateral trap location equations in nanowire structure. Using the derived equations, accurate trap locations were extracted in the devices with single trap as well as multiple traps.
The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated. Mobility was estimated by extracting of source/drain resistance.
In this work, channel thermal noise in the twin silicon nanowire MOSFET (TSNWFET) is predicted using analytic thermal noise model taking into account short channel effects. TSNWFET used in this work has 40 nm gate length, 5 nm radius of silicon wire, and the 3.5 nm of gate oxide. Predicted thermal noise is compared with that of the planar MOSFET using various processes.
In this paper, voltage transfer characteristic (VTC) of inverter based on Twin Silicon Nanowire MOSFETs (TSNWFETs) is extracted. TSNWFETs with 40 nm gate length and 10 nm nanowire diameter are used to construct inverter. Gain, switching threshold voltage, noise margin and transition width are extracted from VTC to show the performance of inverter based on TSNWFETs. In addition, these performance parameters...
For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.
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