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The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through...
We investigate 3D plasma resonances in InGaAs n+ - n - n+ diodes undergoing an optical beating excitation at room temperature. For this sake, we calculate the electric field response in the middle of the diode regions by using a hydrodynamic approach coupled to a one-dimensional Poisson solver. The results show clearly the presence of three-dimensional plasma resonances in the terahertz frequency...
A modified Poisson equation able to take into account the influence of gates and a δ-doping in FETs and HEMTs is proposed. This equation can be solved self-consistently together with 1D transport equations along inhomogeneous transistor channels like those of the hydrodynamic or drift-diffusion approximations or with a Monte Carlo simulator used to describe carrier transport in n+nn+ structures.
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