The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through...
We use a hydrodynamic model self-consistently coupled to a 1D Poisson solver to simulate the excitation by optical beating as well as by electrical perturbation of plasma waves in n+nn+ InGaAs diodes at room temperature. We calculate the electric field response and the velocity response of the carriers in the middle of the diode regions. Our results show clearly the presence of three-dimensional plasma...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.