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Physical vapor deposition (PVD) of high explosives can produce energetic samples with unique microstructure and morphology compared to traditional powder processing techniques, but challenges may exist in fabricating explosive films without defects. Deposition conditions and substrate material may promote microcracking and other defects in the explosive films. In this study, we investigate effects...
Terahertz (THz) plasmonic field effect transistor sensors have emerged as prime contenders for applications in THz and sub-THz communications, biomedical sensing, and imaging. Noise is one of the most important factors determining their performance. We show that the conventional approach of using thermal noise of the device impedance for predicting the sensor performance is inadequate because it ignores...
We discuss the thermal noise and the effect of input noise sources on the output noise of plasmonic Field Effect Transistors operating in a quasi-ballistic regime. The input noise strongly affects the output noise at large signals and when the detectors operate near the threshold, where the highest responsivity is reached. In the detection regime with a finite drain current, 1/f noise becomes dominant...
We report on the THz pulse detection by a photoconductive InGaAs High Electron Mobility Transistor with enhanced sensitivity due to induced nonlinearities mixing the rectified optical pulse with the THz pulse. The experimental setup (see Figure 1) is similar to that used in the THz Time Domain Spectroscopy (TDS) but instead of a photoconductive antenna typically fabricated on low temperature grown...
We demonstrate detection of individual pulses of terahertz radiation generated in femtosecond laser systems by InGaAs plasma-wave terahertz detectors. Nonlinearity of the detection mechanism is analyzed experimentally by comparison of saturation effects at femtosecond and nanosecond terahertz excitations. Good sensitivity and wide dynamic range make these detectors promising for short-pulsed terahertz...
We present a microscopic theory for luminescence of doped GaAs and its application to a study of optical refrigeration. We find that p-doping affects the temperature dependence of the cooling threshold in a complex way.
We present a comprehensive many-particle theory for optical refrigeration of bulk GaAs via luminescence up-conversion. We predict cooling in the regime of a partially ionized exciton gas and discuss its temperature dependence.
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