Search results for: Heather O'Brien
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The U.S. Army Research Laboratory (ARL) and Wolfspeed developed silicon carbide (SiC) vertical MOSFETs for linear-mode operation. The motivation is to determine whether SiC's material properties enable SiC MOSFETs to withstand higher pulse-current density and energy dissipation than is achievable with commercial silicon linear-mode MOSFETs. The SiC device is a 3.3 mm × 3.3 mm chip with a thick gate...
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The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determined by the spreading velocity, which depends on applied gate current, applied anode current density,...
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Library & Information Science Research > 2017 > 39 > 2 > 149-157
Participatory, arts-based methods generate rich data with which researchers can explore information behavior in context, and may be particularly apt when engaging with youth or participants with low literacy levels. Information world mapping (IWM) is an innovative and interactive drawing-based interview technique for data elicitation. Initially developed for use in a study of young parents’ health...
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2016 Lester Eastman Conference (LEC) > 55 - 58
Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems...
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Silicon carbide Super Gate Turn-Off (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed power or power electronic systems. However, the transient characteristics and failure modes of these devices have to be further understood. This paper presents the Atlas TCAD simulation of a 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions. The...
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This research is focused on characterization of the turn-on transition of high voltage SiC thyristors of different epilayer thicknesses and active area sizes to determine their suitability and limitations in high-dI/dt, fast-switching applications. The unique aspects of this study include the very high current density being switched through the thyristors over a short period of time at initial turn-on,...
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Ultra-high voltage (>10 kV) power devices based on SiC are gaining significant attentions since Si power devices are typically at lower voltage levels. In this paper, a world record 22kV Silicon Carbide (SiC) p-type ETO thyristor is developed and reported as a promising candidate for ultra-high voltage applications. The device is based on a 2cm2 22kV p type gate turn off thyristor (p-GTO) structure...
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This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A. Their active area was 0.32 cm2, with a...
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This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A. Their active area was 0.32 cm2, with a...
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Within and beyond Library and Information Science (LIS), researchers are employing participatory, arts‐based research as one way of extending traditional research methods. The use of creative methods can enrich our understanding of complex information practices, particularly in multimedia information environments. This panel will provide an overview of arts‐involved practices of data collection, data...
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IEEE Electron Device Letters > 2014 > 35 > 8 > 862 - 864
One of the major requirements for adoption of new silicon carbide (SiC) super gate turn-off thyristors (SGTOs) into high-energy applications is to verify the safe operating area and long-term reliability capabilities of these devices. In this letter, we have developed a unique high-energy testing system that can evaluate the performance limitations with respect to lifetime capabilities of the 9 kV,...
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An advanced evaluation system for experimental high power silicon (Si) and silicon carbide (SiC) Super Gate Turn Off Thyristors (SGTOs) with custom data acquisition and characterization electronics was designed and built in a cooperative agreement between engineers at Texas Tech University's (TTU) Center for Pulsed Power and Power Electronics (P3E) laboratory and research scientists at the U.S. Army...
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The development of high-voltage power devices based on wide bandgap semiconductor such as silicon carbide (SiC) has attracted great attention due to its superior material properties over silicon for high-temperature applications. Among the high-voltage SiC power devices, the 4H-SiC gate turn-off thyristor (GTO) offers excellent current handling, very high voltage blocking, and fast turn-off capabilities...
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An advanced evaluation system for experimental high power Super Gate Turn Off Thyristors (SGTOs) with built — in custom data acquisition and characterization electronics was designed and built in a cooperative agreement between engineers at Texas Tech University's Center for Pulsed Power and Power electronics (P3 E) laboratory and research scientists at Army Research Lab (ARL). The system consist...
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The need for power semiconductor devices capable of high-voltage, high-frequency, and high-temperature operation has been continuously growing, especially for energy conversion system and related power grid applications. However, current power converters built with silicon switches are quite bulky and inefficient, making their utilization difficult in practical energy conversion and power grid systems...
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The U.S. Army Research Laboratory has been driving the advancement of high-voltage, high-current silicon carbide devices and packaging through collaborations with Cree, Inc. and Silicon Power Corp. This paper reports on 1.0 cm2 Super-GTOs fabricated by Cree, packaged by Silicon Power, and evaluated under pulse conditions at the Army Research Laboratory. These semiconductor switches were utilized to...
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In a collaborative effort between Army Research Lab (ARL) and Texas Tech University's center for Pulsed Power and Power Electronics (P3E) lab, a high power, high energy test bed meant to characterize experimental Si and SiC Super Gate Turn Off (SGTO) devices was designed and built. The system was engineered to run the devices through an arbitrary number of test cycles while recording all pertinent...
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The silicon carbide SGTO is a future switching component technology of interest to the Army for various pulsed power applications. The research presented in this paper investigates the dV/dt immunity and recovery time (Tq) capability of 1.0 cm2 silicon carbide (SiC) super gate turn-off thyristors (SGTOs). The 1.0 cm2 SiC SGTO is the largest chip based silicon carbide thyristor reported. The SiC SGTO...
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In a continuing effort to reduce the weight and volume of high-power pulse switches, the U.S. Army Research Laboratory and Silicon Power Corp. have developed new Super-GTO-based switch modules that out-perform previous designs while maintaining compact size. These switch modules have recently been demonstrated at a 50% increase in hold-off voltage and 30% increase in pulse current (compared to switches...
