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This work presents an ultra-low power oscillator designed to target different contexts, such as crystal-assisted time keeping, reference oscillator to optimize the always on domain of a microcontroller or wake-up timer. This oscillator enables ultra-low power operation in 0.18 µm CMOS technology; the core oscillator consumes 2.5 nW at room temperature, with a temperature stability of 14 ppm/°C [−40°C...
The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the generation of the Hall cells. Experimental results regarding the Hall cells absolute sensitivity, offset and offset temperature drift are provided for...
Contactless current measurement based on Hall-effect sensors can be performed in either closed- or open-loop configuration. In this paper an open-loop sensor system with a current-mode output is described. The system measures the magnetic field induced around the current path targeting high linearity, accuracy, and speed. As the accuracy of the Hall sensor microsystem is affected by temperature-dependent...
Contactless current measurement based on Hall-effect sensors can be performed in either closed- or open- loop configuration. In this paper an open-loop sensor system with a current-mode output is described. The system measures the magnetic field induced around the current path targeting high linearity, accuracy and speed. As the accuracy of the Hall sensor microsystem is affected by temperature-dependent...
In order to provide the information on their Hall voltage, sensitivity and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall Effect sensors has been developed. In this sense, the finite element model associated contains both geometrical parameters (dimensions of the cells) and physical parameters such as mobility, conductivity, Hall factor, carrier concentration...
This paper presents an integrated Hall sensor microsystem with continuous gain calibration and a current-mode back-end. The integrated system includes a Hall sensor with internal biasing, a fully differential front-end, a preamplifier chain, a voltage-to-current converter and internal voltage and current references. The main feature of this microsystem is full integration, including the references,...
In this paper, the performance of CMOS Hall Effect Sensors with four different geometries has been experimentally studied. Using a characteristic measurement system, the cells residual offset and its temperature behavior were determined. The offset, offset drift and sensitivity are quantities that were computed to determine the sensors performance. The temperature coefficient of specific parameters...
This paper presents a fully integrated Hall sensor microsystem with a current-mode output. The system operates in open-loop and includes a Hall sensor with internal biasing, a fully differential front-end, a preamplifier chain and a voltage-to-current converter (V-I). The effects of the V-I block on the sensitivity drift of the system are analyzed and a current biasing of the Hall cells is proposed...
We present the design of a wide dynamic-range CMOS A/D interface circuit for ionization chambers, able to digitize input charge of both polarities over six decades, to operate in a radioactive environment, and foreseen working without calibration. The circuit is based on a current-to-frequency conversion, where the converting circuit reconfigures itself depending on the input level to provide an output...
Several Hall sensor configurations have been integrated in CMOS technology and analyzed in terms of offset at room temperature and offset drift. We looked for the best geometry that would minimize the offset and its drift. The targeted specification was ±30 µT for offset at room temperature and ±0.3 µT/°C for the drift. The measurement setup developed allows a clean, reliable and fast analysis of...
A new technique for driving silicon-on-insulator pixel matrixes has been proposed in, which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8×8 pixel matrix was designed and fabricated using the above technique. In this paper, the measurement set-up is described and the performance evaluation procedure is given, together with...
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