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The first fully integrated oven-controlled temperature compensation system with the transformer coupled Colpitts oscillator is developed by 65nm CMOS tech. This work achieves ±1.55ppm frequency stability over the 85°C temperature range which can be used for the GPS application (<2ppm). An integrated heater in the FBAR chip consumes 14mW power at maximum. The temperature resolution of TDC is 150uK,...
Low power and low noise RF frequency reference is essential for radio system. Radio standards require reference frequency to be stable over a wide range of temperatures (−40 to 110°C for industrial). The state of the art radio architecture used temperature compensated resonator (ZDR), but the stability is not enough to meet the most stringent spec. for GPS application (<2ppm). The solution is here...
We present the proposed oscillator architecture to reduce the close-in phase noise as well as power consumption. The proposed Colpitts oscillator removes the current source which is the main source of the 1/f noise conversion. The removal of the current source is compensated by the transformer and cross coupled capacitors. The 2GHz FBAR is used for the high Q frequency selective elements in the oscillator...
A low-power sensor interface IC suitable for a differential frequency measurement application is demonstrated. The circuit is used in a FBAR sensor system which includes a sensor and a reference FBAR. The sensor signal is processed and a digital output representing the sensor input is transmitted using a two wire serial interface. The architecture is entirely digital and benefits from scaling to advanced...
Multiple emerging wireless applications (body-worn devices and IoT, for example) will demand previously impossible thin-film form factors and low system cost. One key enabling technology for this paradigm is a new class of radios that offer cost/size approaching RFID while still maintaining peer-to-peer connectivity like more complex radios. These radios need to be cheap and thin, which means they...
This work presents a single-chip sub-mm3 wireless pressure sensor suitable for tire pressure monitoring. The dynamic behavior and safety of an automobile tire is closely dependent on its inflation pressure: maintaining the manufacturer-recommended pressure is essential to prevent tire failure, provide stability, improve fuel efficiency and tire-life, and to reduce C02 emissions [1]. Thus, Tire-Pressure...
A wireless sub-mm3 FBAR-based mass sensor fully integrated in a hermetic package is demonstrated. We propose a wafer-scale commercially viable manufacturing process for the integration of the sensor and the interface circuitry. The drift in frequency of the FBAR sensor due to temperature, aging and stress is reduced by a factor of 10 through an integrated differential measurement. The sensor achieves...
This paper presents an ultra-low-power 2.4GHz receiver for the IEEE 802.15.4 (ZigBee) standard. Traditional short-range ISM-band radios require a PLL-based frequency synthesizer for channelization across the band of interest [1-3]. The lowest ZigBee power consumption found in the literature to date is 1.6mW (RX) and 1.8mW (PLL) by employing a sliding-IF architecture [1]. [4] proposes a BAW-based 2...
We present a technique to reduce the close-in phase noise of high-Q (FBAR/MEMS/crystal) oscillators. The proposed technique suppresses the up-conversion of 1/f noise via AM-PM conversion by the addition of a non-linear capacitor to the tank. The proposed AM-PM suppression technique has no additional power penalty and incurs a minimal area penalty. Measurements from multiple dies of a 1.9GHZ FBAR oscillator...
A splitbar is comprised of two identical thin film bulk acoustic (FBAR) resonators, whose electrodes are cross connected such that the C-axes of the piezoelectric films are parallel/anti-parallel to an applied electric field stimulus. The RF response of a splitbar is near identical to that of a single resonator, but unlike the single resonator, because the resonators are cross wired, their H2 responses...
We present a 22µW, 2.0GHz FBAR oscillator - the lowest power reported to date for a GHz-range oscillator of this type. Low power consumption is achieved through co-design with a high Rp FBAR resonator and a weakly-forward biased bulk connection. An oscillator with a standard bulk connection was fabricated for comparison. The chip was fabricated in a 0.18µm CMOS process. The weakly-forward biased bulk...
This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt2. One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt2 of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt2 as high as 5.6% and linear TCF of -6 ppm/°C. Significant Kt2 improvement comes from optimal design of stack film,...
A 600MHz thin film bulk-acoustic wave resonator (FBAR)-based differential oscillator fabricated in a 0.13μm CMOS process is presented. The oscillator employs a crosscoupled pair with an FBAR resonator tank providing high Q source degeneration to realize frequency oscillation at the series resonance. The measured phase noise is -126 and -150dBc/Hz at 10kHz and 1MHz frequency offsets respectively; the...
This paper describes the design and measured performance of a low-noise L band oscillator based on Agilent's Film Bulk Acoustic Resonator (FBAR) for applications in digital communication systems. This experimental oscillator demonstrated at 1951 MHz with a phase noise of - 115 dBc/Hz at 10KHz from the carrier represents the first example of a low noise Si-Bipolar FBAR oscillator.
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