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Ni barrier symmetry effect on the electromigration (EM) failure mechanism of Cu/Sn–Ag microbump were systematically investigated by studying the intermetallic compound (IMC) growth characteristics at 150 °C with a current density of 1.5 × 105 A/cm2. In the symmetric Ni barrier structure, Cu diffusion to Sn–Ag solder was restricted by the Ni barrier at both interfaces and the Ni3Sn4 phase formed by...
Effects of 200 °C annealing and 85 °C/85% relative humidity (R.H.) temperature/humidity environments on the electrical resistivity and interfacial adhesion energy between screen-printed Ag film and polyimide substrate were systematically investigated. Measured peel strength was 22.2 gf/mm before environmental treatment, and then decreased to 0.1 and 0.5 gf/mm for annealing and temperature/humidity...
Recently, flip chip solder bumps have been replaced by the fine-pitch solder micro-bump due to the miniaturization of electronic devices and the high performance requirement, and so on. Because of the fast decreasing size of the micro-bump and increasing power consumption needs in logic through-Si via applications, the significance of electromigration among major reliability issues have been increased...
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