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In this paper we present an overview of two types of majority gate devices based on spintronic phenomena. We compare the spin torque majority gate and the spin wave majority gate and describe work on these devices. We discuss operating conditions for the two device concepts, circuit implication and how these reflect on materials choices for device implementation.
Synchronization on the nanoscale has a wide range of applications ranging from timing, navigation, signal processing, microwave communication and novel computing and memory concepts. Existing coupled micromechanical oscillators suffer from limited range, neighborhood restriction and non-configurable coupling which limit the control, physical size and possible topologies of complex oscillator networks...
We report the demonstration of a broadband (60 GHz) hitless switch electrically driven by PIN diodes surrounding two coupled resonant cavities. The topology used enables the switch operation without perturbing adjacent channels in a WDM system.
We demonstrate a high-speed integrated optical link on a silicon chip using low-power silicon microresonator electro-optic modulators and low-capacitance germanium photodetectors. Integrating compact devices to provide multiple functions is essential for building scalable optical interconnects.
We demonstrate 50 Gbit/s modulation using four silicon microring modulators within a footprint of 500 mum2. This is the highest total modulation capacity shown in silicon using compact micro-ring modulators.
We demonstrate GHz-speed electro-optic modulation using microring resonators in a deposited layer of polycrystalline silicon. Active optical devices in a deposited microelectronic material can enable monolithic large-scale integration of photonic networks on a microelectronic chip.
We demonstrate, for the first time, an electro-optically tunable delay element on a silicon micro-chip. We show tunable delays between 5.51 ps to -28 ps, corresponding to group indices between 37.2 and -190.
We propose non-reciprocal optomechanical devices where light and matter interact via momentum exchange with a movable mirror. Non-reciprocity arises by utilizing the direction of linear momentum of light to differentiate forward and backward propagating light.
We demonstrate superluminal pulse propagation on a silicon chip using an all -optical analog to electromagnetically induced absorption created by the coherent interaction between two micro-resonators. We show group indices tunable between -1158 and -312.
We demonstrate strongly enhanced optical trapping forces on sub-micron-diameter dielectric spheres within a pressure-driven microfluidic flow of several hundred mum/s using the evanescent field of the light in silicon waveguides.
We demonstrate ultra fast tuning of the optical quality factor of a resonator on a silicon chip using electro-optic tuning. We tune the cavity quality factor from 20,000 to 6,000 in 100 ps.
We experimentally demonstrate electrooptic modulation in silicon at 18 Gbps (NRZ) in a micro-ring of 12 micron diameter using a pre-emphasis technique. Device simulations indicate that this technique can extend the bit rate to 40 Gbps.
We demonstrate electro-optic tuning of coupled resonator induced transparency on a silicon chip. We tune the quality factor of the transparency mode between 20000 and 6000.
We propose a new silicon electro-optic device that breaks the tradeoff between extinction ratio and speed in silicon devices and enables operation at 40 Gbps with high extinction ratios (>15dB).
We demonstrate that transitions between discrete cavity modes in optical microcavities can be induced when the resonance of cavity is tuned on a time scale shorter than the inverse of the frequency difference between modes.
We show experimentally a scheme for achieving high-speed operation for a carrier- injection based silicon micro-ring modulator. The performance of the modulator is analyzed theoretically and a 12.5-Gbit/s modulation with 9-dB extinction ratio is demonstrated experimentally.
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