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A modeling method for RF power transistor fingers and large discrete die is presented in order to evaluate, visualize, and optimize various performance parameters at the device finger level. The model is constructed using a combination of TCAD based active die model and passive interconnect models based on Wheeler's transmission line formulation. Active die model of a fraction of the total periphery...
In this paper, process, device, and electromagnetic simulations are combined to produce a distributed nonlinear model for an LDMOS RF power transistor. The simulation challenges are handled by using multiple simulators, each with a suitable role in the modeling process. Semiconductor fabrication and device operation are performed through the process and device technology computer aided design (TCAD)...
This paper presents an optimization-based technique to develop silicon substrate for accurate and efficient electromagnetic (EM) simulations. The proposed method simplifies the highly nonlinear substrate doping profile into a few regions with effective conductivities. The accuracy of the optimized substrate is validated against measurement data for two spiral inductors. This simplified substrate enables...
The coupling between charge transport, heat and energy flow required to model high frequency power devices is developed in the context of a computationally efficient physics-based model, which has been successfully applied to microwave laterally diffused MOS transistors. The accurate prediction of small- and large-signal microwave characteristics, and the physical insight gained, can be used in the...
A new quasi-2-D model for laterally diffused metal–oxide–semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased -n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section...
The development of a selective-epi, SiGe:C HBT module for 77GHz automotive radar applications is described. A cutoff frequency (fT ) of 185GHz, in conjunction with a maximum oscillation frequency of 260GHz has been achieved through the implementation of a self-aligned selective-epi base structure and a simple, cost-effective collector construction without buried layer or deep trench isolation
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