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High power amplifier design always requires a compromise between performance and stability. The goal is to design an amplifier that is stable under all operating conditions without sacrificing too much performance by the introduction of stability improvement measures. This paper describes the design of an X-band GaN High Power Amplifier MMIC and the performed stability analysis and measures taken...
Odd-mode parametric oscillations are a common cause of malfunctioning in power amplifiers. A very typical example of odd mode oscillation is the showing up of a spurious component at the fundamental frequency divide-by-two for some input power values. In this paper, a less known instability of odd-mode nature is analyzed. It occurs at the fundamental frequency, without the generation of spurious spectral...
All the players in RF industry are looking to develop high efficiency circuits, and are willing to invest heavily to achieve this target. Increasing power efficiency enables decreasing power consumption, thus reducing the use of the resources provided from the battery, to reduce the size of cooling systems, improve reliability, and ultimately reduce the electricity bill. For advanced design of RF...
This paper describes the development of a high-efficiency S-band power amplifier (PA) with power flexibility, based on packaged GaN devices. This amplifier aims to demonstrate the highest power added efficiency (PAE) for a flexible output power from 1 W to 10 W. The approach consists in selecting the suited components of the shelf (COTS), and then in performing comprehensive power characterizations...
This paper aims to depict a non linear and electrothermal model of AlGaN/GaN HEMT devices. This model was especially developed in order to operate in switch mode but it can also be used for amplifiers design. For this purpose, a particular attention has been brought on the formulation of the current source and the junction capacitances in order to extend the model validity all over the full I(V) characteristics...
This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in communication systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain...
This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain load...
This paper deals with a scalable and distributed electro-thermal model of AlGaN/GaN HEMT. This model has been especially developed for multi-fingers and large periphery transistors. Quasi isothermal measurements by means of pulsed I(V) and pulsed [S] have been performed at different temperatures to extract the model and its thermal dependencies. Then load-pull measurements have been performed to final...
This paper presents a non linear model of HEMT device which operate in multi-bias conditions, that is to say in class-AB, class-B, class-C, class-D and class-S. The model was derived from pulsed I(V), pulsed S parameters and large signals measurements. The aim is to provide to the designers a single model that can be used whatever the operating class, whatever the application referred. It should be...
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