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In this paper, we will demonstrate a novel approach to incorporate Si and/or Ge nanostructures into crystalline rare earth oxides using molecular beam epitaxy (MBE) for nanoelectronic devices application. By efficiently exploiting the growth kinetics during MBE we succeeded in creating semiconductor nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots...
We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline...
In this work, impact of domain boundaries on dielectric properties of epitaxial Gd2O3 thin films grown on Si(001) substrates with 4?? miscut along [110] azimuth were studied. Epitaxial Gd2O3 layers with and without domain boundaries could be prepared on same Si(001) substrates with 4?? miscut when the surface is prepared under special condition prior to the layer growth. A miscut substrate surface...
Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 ??m CMOS technology. We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. On Si(100), crystalline Gd2O3 grows usually as (110)-oriented domains, with two orthogonal in-plane orientations...
This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd2O3 films epitaxially grown on Si(111) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd2O3 layers exhibit a well-ordered cubic bixbyite structure with a single orientation, perfect crystallinity and a sharp interface...
Capacitor composed of single crystalline Gd2O3 on Si(100) with Pt top electrode was fabricated by molecular beam epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function...
Epitaxial growth of silicon on heavily boron-doped Si(111) surface was investigated. In our experiments, we found a new growth mode in the very initial stage for boron-coverage below 0.5 monolayer (ML) likely associated with defect-induced nucleation of Si islands. The initially stage of growth on boron-covered Si(111) could be interpreted by a quasi van der Waals like epitaxy, where Si adatoms catch...
Si quantum dots (QD) embedded into Gd2O3 and Si quantum wells (QW) with epitaxial Gd2O3 as the barrier layers were grown on Si substrates. With decreasing dot size down to the 2-nm range, the optical absorption exhibits a spectacular shift in spectral threshold upto 2.9plusmn0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. Such shift suggests a significant influence of quantum...
Two process concepts for integration of novel gate stacks with epitaxial high-k dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd 2O3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process....
In this letter, ultrathin gadolinium oxide (Gd2O3 ) high-k gate dielectrics with complementary-metal-oxide-semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET=0.86 nm. The extracted dielectric constant is k=13-14. Leakage currents...
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