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This paper evaluates the hot-carrier performance of the n-channel high-voltage (30 V) MOSFET device. This device is widely used in high-voltage linear products. It can withstand 30 V across any two terminals. This large voltage range requires thorough hot-carrier analysis, investigating potential hot-carrier mechanisms not believed to have been previously explored in the literature. It is established...
This paper describes a 1 ??m BiCMOS process which offers numerous high performance, high precision devices suitable for mixed signal designs. The key features of the process are the performance and modularity of the process and the optimization of the bipolar transistor for analog applications.
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