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The gate C-V characteristics of MOS device with ultrathin gate dielectrics and different types of non-uniform substrate doping profile with quantum mechanics (QM) treatment is presented. Self-consistent solution of Schrodinger's and Poisson's equations with wave function penetration are used to determine the MOS electrostatics, and results show that at low-frequency the C-V characteristic curves depend...
A quantum mechanical (QM) self-consistent model is developed for nano-MOS devices for high-κ insulator including wave function penetration effect into the gate dielectrics. The effects of different types of interface trap distributions are incorporated. It has been observed that capacitance-voltage (C-V) characteristics are sensitive to the interface trap distribution. Simulated results has been compared...
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