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The transport properties of electronic devices made from single crystalline molecular semiconductors typically outperform those composed of thin-films of the same material. To further understand the superiority of these extrinsic device properties, an understanding of the intrinsic electronic structure and properties of the organic semiconductor is necessary. An investigation of the electronic structure...
We report using a novel weak-oxidant plasma-enhanced atomic layer deposition (PEALD) process at 200 ??C to deposit ZnO thin films for stable, high mobility, pyroelectric thin film transistors (TFTs). Our PEALD ZnO TFTs use Al2O3 gate dielectric, also deposited by PEALD, and have field-effect mobility of 20-30 cm2/V-s. In these ZnO TFTs the mobility is found to be very weakly temperature activated...
In organic thin-film transistors (OTFTs) the intrinsic properties of the semiconductor are generally masked by structural defects which localize and trap the charge carriers and contact effects, which limit charge injection and cause deviation from ideal linear and square-law behavior. Thus, their electrical characteristics are strongly dependent on the fabrication conditions. We perform current-voltage...
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