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A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with α-IGZO thin-film transistor are shown at the bonding temperature of 210°C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance...
As the size of microbumps continues to shrink, the amount of solder decreases gradually, resulting the brittleness of solder joints due to formation of intermetallic compounds. Low-temperature Cu-to-Cu direct bonding appears to be one of the solutions for fine-pitch microbumps for 3D IC packaging. However, the high bonding temperature and pressure are the main problems of this approach. We achieve...
The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a metal–oxide–semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study to investigate the effect of temperature on the Ge film quality. Prior to high- dielectric deposition, various surface treatments are applied on the...
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