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We report the complementary resistance switching (CRS) capability in a single-stack ITO/HfOx/TiN crossbar resistive memory device with a wide read margin. The device read-window is 1.5 V, giving a "comfortable" array read-window of ~1.1 V. These results represent significant improvement over those achieved for the TiN/HfOx/TiN and other single devices reported to-date, and address...
The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a metal–oxide–semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study to investigate the effect of temperature on the Ge film quality. Prior to high- dielectric deposition, various surface treatments are applied on the...
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