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This paper describes the design and function upgrade of 3D electrostatic energy harvester. The structure consisting of simple finger layout works on the principle of an electrostatic converter and converts a non-electric energy into electrical energy by periodical modification of the gap between the electrodes. The mechanical structure is modeled as a 3D silicon-based MEMS. The basic structure reaches...
This paper describes the design and evaluation of 3D electrostatic energy harvester. It is based on electrostatic converter and uses the principle of conversion of non-electric energy into electrical energy by periodical modification of gap between electrodes of a capacitor. The structure is designed and modelled as three-dimensional silicon based MEMS. Innovative approach made it possible to reach...
This paper discusses the design and simulation of a 3D electrostatic generator, one part of power supply component of the self-powered microsystem [1], which is able to provide enough energy to power up smart sensor chains. In this case the most suitable method to gather enough electrical energy is so-called energy harvesting principle [2,3]. The designed generator is based on electrostatic converter...
The advent of novel sub-micron technologies of IC fabrication led to such a decrease in lead-to-lead separation that it is not possible any more to neglect the influence of these leads on the reliability of the system operation. Both the small lead separation and the application of multilayer interconnecting systems cause parasitic electromagnetic couplings; in the case of a unipolar CMOS technology,...
Parasitic electromagnetic couplings result in the transfer of interfering energy from the interference source to the interference receiver. Inside the IC's the principal sources of interference are usually the clock circuits, output drivers and other circuits with low output impedance. The most frequent receivers of interference are the input circuits, flip-flops and circuits with high input impedance...
The development of integrated circuits has reached a situation today that the circuit operating speed is not limited by the parameters of the transistors any more, but rather by the electrical parameters of the interconnections inside the integrated circuit (Kropewnicki, 2002). For this reason, it is necessary to take in account the properties of interconnecting conductors from the start of the circuit...
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