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Tungsten is an attractive alternative to n+ poly for submicron CMOS gate due to its near midgap work function (⋍4.8 eV) and low resistivity (⋍ 10 μΩ-cm), The midgap work function results in desired threshold voltages (± 0.6V) without the need for channel implant into n or p-channel devices. This avoids the inferior buried-channel operation of PMOS and, at the same time yields a higher mobility and...
The device characteristics and the radiation damage of n- and p-channel MOSFETs patterned using synchrotron X-ray lithography are examined. The effect of radiation damage caused by X-ray lithography on the device reliability during hot electron injection is investigated. Large amounts of positive oxide charge, neutral traps, and acceptor-like interface states are created by X-ray irradiation during...
Submicron tungsten gate MOSFET with 10 nm gate oxide has been demonstrated for the first time. The results ranging from W stability against SiO2to excellent thin oxide MOS properties and high FET transconductance, demonstrate the feasibility and advantages of the tungsten gate for submicron technologies. In applications such as high density DRAM, tungsten can be a primary candidate for gate material...
The design and characterization of a high performance 0.5 μm channel CMOS is described. The design features thin epi with retrograded n-well, an n+ polysilicon gate electrode, 12.5 nm gate oxide, shallow source/drain diffusions, and thin self-aligned titanium silicides. To control channel hot electron degradation effects in the NFET device with 3.3V power supply, different S/D junctions with graded...
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