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We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good trade-off between breakdown voltage and specific on-resistance for the first time. Device with 4 mum channel length and 16 mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmega-cm2 (VG-VT=20 V).
We have studied and optimized the breakdown voltage of enhancement-mode n-channel GaN hybrid MOS-HEMTs on sapphire substrate. These MOS-gated transistors, with different Mg doped p-type GaN layer underneath the unintentional doped AlGaN/GaN layer, have breakdown voltage as high as 1300 V using a dielectric isolation (DI) RESURF approach.
We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mum channel length and 16-mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmegamiddotcm2 (VG - VT = 20 V), best reported to date.
We report on the demonstration of enhancement- mode n-channel lateral implanted GaN high-voltage MOSFET with breakdown voltage up to 2.5 kV or specific on-resistance as low as 30 mOmegaldrcm2. With proper RESURF dose, drain current up to 0.1 A and breakdown voltage up to 1570 V is realized on the same device. The reliability lifetime defined by the failure criteria of DeltaIp/Ip=20% was determined...
In this paper, we successfully demonstrate an AlGaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates. In order to obtain the high breakdown voltage and to improve the crystalline quality of GaN layers, a thick GaN epitaxial layer including a buffer layer with a total thickness of over 6 mum was grown. The breakdown voltage and the maximum drain current were achieved to be...
AlGaN/GaN HFETs are expected to be a good candidates for power switching application at high temperatures. We optimized the fabrication process of the AlGaN/GaN HFET. A low specific on-state resistance of 6.3 mOmegacm2 and a large breakdown voltage of 600 V were achieved at 225degC. We also designed and fabricated a half bridge module using the AlGaN/GaN HFETs and SiC SBDs. Switching characteristics...
Improved characteristics of an AlGaN/GaN HFET are reported. We introduced new fabrication processes using Ti/AlSi/Mo ohmic electrode and a low refractive index SiNx to decrease the contact resistance and gate leakage current. The AlGaN/GaN HFET showed low a specific resistance of 6.3 mOmegacm2 and a high breakdown voltage of 750 V. We investigated switching characteristics of an AlGaN/GaN HFET. The...
We performed an AlGaN/GaN Schottky barrier diode (SBD) with a high breakdown voltage of over 1000V on Si (111) substrate. An AlGaN/GaN heterostructure without any crack was realized on a Si (111) substrate using a metalorganic chemical vapor deposition (MOCVD). We also fabricated an AlGaN/GaN heterojunction field effect transistor (HFET) using an AlGaN/GaN heterostructure on a Si (111) substrate....
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