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When transistor noise characterization becomes a difficult task at millimeter wave range, the accuracy on the resulting noise parameters is not or poorly discussed. Within this context, this paper aims to present a methodology to estimate the uncertainties related to the extraction of the four noise parameters when using in situ tuner techniques, in the 130–170 GHz frequency range. B9MW SiGe HBT from...
In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110...
In this paper, the design and use of an in-situ tuner (IST) aiming on-wafer multi-impedance method are presented. The conventional method using off-wafer tuner is limited by the frequency range and has losses between this external Tuner and the device under test (DUT). Here, IST is placed near the DUT to achieve higher |Gamma| and to cancel losses between the impedance generator and the device. The...
In this paper, for the first time, silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This tuner is directly integrated in on-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60...
In this paper, for the first time, Silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated in On-wafer tested transistor test structure. The achieved proximity between device under test (DUT) and the developed Tuner allows better impedances...
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