Search results for: E.A. Gutierrez

Items from 1 to 13 out of 13 results

article

Relationship between metal enrichments and a biological adverse effects index in sediments from Todos Santos Bay, northwest coast of Baja California, México

A. Muñoz-Barbosa, E.A. Gutiérrez-Galindo, L.W. Daesslé, M.V. Orozco-Borbón, more

Marine Pollution Bulletin > 2012 > 64 > 2 > 405-409

In 1992 and 2004, heavy metals concentrations were measured in surficial sediments from Todos Santos Bay, located in Ensenada, Baja California, Mexico. The aim was to search for relationships between metal enrichment factors and a biological adverse effects index. Unlike Ni, the elements Cd, Cu and Zn showed significant correlations (p<0.05) between enrichment factors and the biological adverse...

article

Magneto-modulation of gate leakage current in 65nm nMOS transistors: Experimental, modeling, and simulation results

E.A. Gutierrez-D, J. Molina-R, P. Garcia-R, J. Martinez-C, more

Solid State Electronics > 2010 > 54 > 9 > 1022-1026

We introduce experimental results that reveal a small static and a slowly varying-dynamic magnetic field B induces a magneto-modulation of the gate leakage current of a 65nm nMOSFET. For the case of a 100mT (mili-Tesla) static B field a variation of the 6% (1.5nA/27nA) of the gate current is observed. For a 5Hz slowly varying (±100mT) square pulsed magnetic field, the gate current dynamic variation...

chapter

Gate current tunneling modulated by magnetic field in 65nm nMOSFET's

E.A. Gutierrez-D, F. Guarin

2009 International Semiconductor Device Research Symposium > 1 - 2

2009 International Semiconductor Device Research Symposium (ISDRS 2009)

An alternative characterization technique for ultra-thin gate oxides unveils that a magnetic field, applied parallel to the surface and perpendicular to the channel current, modulates both gate oxide tunneling and channel current. This is attributed to magnetic modulation of both quantum confinement and the Si-SiO₂ potential barrier of a MOSFET. This new characterization technique is used to measure...

chapter

Magnetic field induced gate leakage current in 65nm nMOS transistors

E.A. Gutierrez-D, J. Molina-R, P.J. Garcia-R, J. Martinez-C, more

2009 Proceedings of the European Solid State Device Research Conference > 185 - 188

39th European Solid-State Device Research Conference. ESSDERC 2009

We present experimental evidence that reveals steady state and transient magnetic fields modulate gate current leakage in MOS transistors and produce channel current interference. This steady- and transient-state electromagnetic interference is attributed to surface channel charge and mobility space- and time-modulation, as validated by Minimos-NT electromagnetic numerical simulations.

chapter

Electron diffusion in 0.18 μm MOS transistors at 200 μC

E.A. Gutierrez-D

2008 7th International Caribbean Conference on Devices, Circuits and Systems > 1 - 6

ICCDCS '08. 7th 2008 International Caribbean Conference on Devices, Circuits and Systems

A 0.18 mum CMOS technology has been characterized and modeled from room temperature (20degC) up to 200degC. The carrier mobility, the surface potential, the gradient of inversion charges, and the electric field are calculated by solving the Poisson and the continuity equations. The drift of charges rather than the charge diffusion is found to be responsible for the temperature-independent drain current...

chapter

RF magnetic emission and electrical coupling in silicon integrated circuits

E.A. Gutierrez-D, P. Garcia-R

2008 7th International Caribbean Conference on Devices, Circuits and Systems > 1 - 5

ICCDCS '08. 7th 2008 International Caribbean Conference on Devices, Circuits and Systems

This paper introduces an analysis of electromagnetic radiation originated from interconnection lines of integrated circuits (IC). The impact of the signal frequency, the bias conditions, and the geometry and layout of the interconnection structure is also addressed. This analysis is used to understand the potential RF interference that may be caused by this emission, and also to predict on-chip signal...

chapter

Temperature dependence of the 2D electron transport in Si accumulation layers

E.A. Gutierrez-D, R. Rodriguez-T

2006 International Caribbean Conference on Devices, Circuits and Systems > 23 - 26

6th International Caribbean Conference on Devices, Circuits and Systems

This paper introduces an analysis and simulation of electron transport in accumulation layers from 300 K down to 4.2 K. The analysis, modeling, and simulation are confirmed with experimental results of an n-well gated resistor. The doping and gate oxide thickness dependence of the thickness of the accumulation layer is also analyzed and simulated. A model that accounts for all these variables is presented...

chapter

Microwave Amplification Using Space Charge Waves in Strained Si/SiGe Heterostructures at 77K

A. Garcia-B, V. Grimalsky, E.A. Gutierrez

2006 International Caribbean Conference on Devices, Circuits and Systems > 183 - 186

6th International Caribbean Conference on Devices, Circuits and Systems

Based on the negative differential conductance phenomenon, we theoretically investigate the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K. A comparison between the n-GaAs thin film and strained Si/SiGe heterostructure of this amplification effect is included as well. We have obtained 2D results of the propagation and amplification...

article

Vacuum-silicon solid microwave diodes and triodes based on P ⁺ ⁺ -N and on tungsten cathodes

S.V. Koshevaya, V.I. Kanevsky, M. Tecpoyotl-T, E.A. Gutiérrez-D, more

Microelectronics Journal > 2001 > 32 > 2 > 173-175

This work reports the analysis of vacuum-solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small losses of the multiplication.In addition, the analysis of the basic parameters of these vacuum-solids microwave diodes with...

chapter

A sub-mT cryogenic silicon magnetic sensor

E.A. Gutierrez-D., R.S. Murphy-A., A. Torres-J., M. Linares-A., more

28th European Solid-State Device Research Conference > 188 - 191

28th European Solid-State Device Research Conference

article

Heavy metals in geochemical sediment fractions of the border region between Baja California, Mexico, and California, USA

J.A. Villaescusa-Celaya, E.A. Gutierrez-Galindo, G. Flores-Munoz

Oceanographic Literature Review > 1997 > 44 > 9 > 1055

The concentrations of the heavy metals in the different geochemical sediment fractions are determined as a means of assessing the impact of residual wastewater on the coastal sediments of the region. During an oceanograpic cruise in April 1992, 20 samples of surface sediments were collected from the coastal shelf of the border region between Baja California (Mexico) and California (USA). The operational...

article

Second substrate current peak and its relationship to gate-voltage dependent series resistance in submicrometre nMOS LDD transistors

E.A. Gutierrez-D, L. Deferm, G. Declerck

Electronics Letters > 1992 > 28 > 1 > 7 - 9

The occurrence of the second substrate current hump (SSCH) has been thoroughly investigated and it is well known that the lateral electric field at the source side (E/sub s/) is responsible for the appearance of the SSCH in submicrometre nMOS LDD transistors. However the fall off of the SSCH after reaching a maximum value, the so called second substrate current peak (SSCP), is not well understood...

article

Carrier multiplication in submicrometre pMOS transistors operated at cryogenic temperatures

E.A. Gutierrez-D, L. Deferm, G. Declerck

Electronics Letters > 1992 > 28 > 3 > 229 - 231

The temperature and bias dependence of the carrier multiplication M(I/sub bulk//I/sub drain/) in submicrometre pMOS transistors has been characterised and studied over the temperature range of 30-300 K. In addition, a model which reproduces the bias dependence of M over the measured range of temperature can be extrapolated down to 4.2 K to predict the internal bulk potential and its related 'kink...

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