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In this paper we present the first complex mixed-signal FinFET circuit (>1500 devices). Design and implementation aspects as well as measurement results of a 10-bit current- steering D/A converter are shown. The achieved performance proves the ability of recent FinEET technology to realize competitive mixed-signal circuits with large device count and wide range of device dimensions. Moreover the...
A new design methodology for FinFET devices is presented which takes into account all complex dependencies on both layout and process parameters of the electrical ESD device parameters of FinFET gated diodes and NMOS FinFET devices in both parasitic bipolar and active MOS operation mode. This methodology allows optimization towards a given ESD target (area consumption, leakage current, parasitic capacitance,...
Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications...
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