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Novel uniaxially strained SiGe-on-insulator (SGOI) pMOSFETs with Ge content of 20% have been successfully fabricated by utilizing lateral (uniaxial) strain-relaxation process on globally (biaxially) strained SGOI substrates. Drastic increase of drain current (80%) caused by the change of strain from biaxial to uniaxial and the mobility enhancement of about 100% against the control Si-on-insulator...
We have developed the plane-NBD method and applied to characterization of strain relaxation of compressive strained SGOI layers. It was found that strain relaxation within compressive-strained SGOI layers after isolation processing were dependent on mesa structures. The plane-NBD method is unique and effective for evaluating in-plane strain distribution within small and thin strained layers in sub-mum...
We propose a novel multi-gate CMOS structure having a high mobility channel with optimal strain configuration, realized by appropriately merging globally-strained substrates with lateral strain relaxation technique. We report successful fabrication and operation of uniaxially-strained SGOI fin and tri-gate pMOSFETs. The improved SCE immunity and the performance enhancement are demonstrated
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