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Short channel junctionless field-effect transistors (JL-FET) were fabricated on a silicon-on-insulator substrate. The channel dimensions were scaled to 20 nm in length and 4 nm in thickness, using anisotropic wet etching of SOI layer. Highly doped channels were formed by diffusion of dopants from the source and drain region at a high temperature annealing. N-type and p-type JL-FETs show drain current...
Electrical performances of ultra-short channel MOSFETs were investigated on SOI substrates. The channel length was scaled to 3 nm using the anisotropic wet etching technique. A difficulty of junction technology was solved by fabrication of Junctionless-FET, which consists of uniform high concentration dopants through the body of device. Superior Junctionless-FET performance was confirmed when the...
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