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As-fabricated (time-zero) variability and mean device aging are nowadays routinely considered in circuit simulations and design. Time-dependent variability (reliability-related variability) is an emerging concern that needs to be considered in circuit design as well. This phenomenon in deeply scaled devices can be best understood within the so-called defect-centric picture in terms of an ensemble...
As-fabricated (time-zero) variability and mean device aging are nowadays routinely considered in circuit simulations and design. Time-dependent variability (reliability variability) is an emerging trend that needs to be considered in circuit design as well. This phenomenon in deeply scaled devices can be best understood within the so-called defect-centric picture in terms of an ensemble of individual...
This paper presents a vertical gate-all-around nanowire FET (VFET) architecture targeting 5nm and beyond technologies, and a new standard-cell construct for digital flow implementation. VFET technology circuits and parasitics for processes and design features aligned with 5nm CMOS are systematically assessed for the first time. Self-aligned quadruple pattering (SAQP) is implemented to achieve required...
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