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We report the world's smallest field effect transistors (FETs) with channel lengths of 32 nm including c-axis aligned crystalline (CAAC) In-Ga-Zn-O as their active layers, which achieve low off-state leakage currents. Furthermore, these FETs exhibit excellent subthreshold swing values despite having thick gate insulating film. The FET operation has been achieved owing to the 3D gate structure with...
We analyzed the switching and readout properties of the NEMS memory. We found that the damping factor influences highly on the transient response time and is important for the fast operations. By assuming the best damping parameter, the transient response times for the readout operation were found about 20 ns and 90 ns for the ON and OFF states, respectively. And the switching time was about 80 ns...
Reduction in parasitic capacitance and resistance is effective to improve ECL gate delay, as well as increase in fT values. In this paper, we demonstrate a device with sub-20 ps tpd values even at fT = 22 GHz by implementing several techniques to reduce parasitics. The relatively low fT of this design results in a high breakdown voltage of 5 V.
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