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Silicon Carbide (SiC) power devices with super-cascode structure provide a cost-effective solution for high performance medium voltage power switches. However, these SiC super-cascode devices are still in the early development stage, and limited information on the device characteristics is available. This paper presents the characterization and evaluation of a 4.5 kV, 40 A SiC super-cascode device...
We take this opportunity to introduce our research and development effort on MEMS-based dynamic x-ray optics that exploit the properties to manipulate and control the x-ray pulses at synchrotron sources for time-resolved experiments.
A polarization converter (PC) based on the mode coupling in a hybrid plasmonic waveguide (HPW) is proposed. This PC comprises a Si core, a low index insulator layer surrounding the Si core, and two asymmetrically arranged Ag strips. Two orthogonal hybrid polarization modes are excited within the low index insulator layer. By exploiting the mode characteristics of these two hybrid polarization modes,...
In orthogonal frequency division multiplexing relay networks with in-phase and quadrature imbalances and full-duplex relay station (RS), how to optimize pilot pattern and power allocation using the criterion of minimizing the sum of mean square errors (Sum-MSE) for the frequency-domain least-squares channel estimator has a heavy impact on self-interference (SI) cancellation. First, the design problem...
Wireless sensor networks (WSNs) with one static sink often suffer from energy hole problem, which means energy consumption of certain sensors near the sink or on critical path is much faster than other sensor nodes. Finally, network partition and isolated nodes are caused. To solve this problem, we propose an Energy-Efficient Strategy Enhancing Lifetime for WSNs based on MECA and PEGASIS. This algorithm...
High voltage, high current power supplies are required to generate plasma in a tokamak. This equipment converts high voltage AC from the grid into both AC and DC energy sources. Recently, new switching devices based on wide bandgap semiconductors have emerged that could significantly improve the efficiency of these systems. This paper explores the benefits of using silicon carbide (SiC) MOSFET power...
String similarity search is a fundamental operation in data cleaning and integration. It has two variants, threshold-based string similarity search and top-k string similarity search. Existing algorithms are efficient either for the former or the latter; most of them can't support both two variants. To address this limitation, we propose a unified framework. We first recursively partition strings...
This work focuses on the development of integrated front side film stack containing a-p Si:H film as the emitter and ITO film as the carrier collection layer in n-type silicon heterojunction (SHJ) solar cells. Doping concentration and thickness of a-p Si:H films, and O2/Ar flow ratio of DC sputtered ITO films were varied to obtain optimal single layer properties. A combined ITO/double a-p Si:H stack...
Fast switching transients from power devices can produce large voltage spikes in motor drive systems with long feeder cable lengths. Referred to as the reflected wave phenomenon, it has been previously demonstrated that the maximum cable length for a given per unit overshoot decreases with increasing switching speed. With the emergence of higher switching speed components based on wide bandgap (WBG)...
One of the main drawbacks of partial transmit sequences (PTS ) scheme is the requirement of side information (SI) for phase recovering at the receiver end, which reduces the frequency efficiency as well as transmitting performance. In this paper, a blind PTS using partial phase recovering scheme without SI is proposed for pilot-aided OFDM systems. The proposed scheme exploits the relationship between...
Boron doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films are deposited using layer-by-layer technique in radio frequency (RF) plasma enhance chemical vapor deposition system. Studies about the influence of gas pressure, RF power density and buffer layer in i/p interface on the microstructure and electrical properties of Boron doped nc-Si:H thin films have been carried out. The experimental...
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