The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
SiO 2 layers thermally grown on Si wafers were irradiated with swift heavy ions in the energy range of (20–710) MeV. Subsequent chemical etching in 4% HF for 6 min produced conical pores with diameters from ∼20 to ∼80 nm in the SiO 2 layers. We have calculated radii and lifetime of the molten regions in the SiO 2 layers and compared them with the pore diameters and diameter...
Track formation processes in InP and GaAs crystals irradiated with swift Bi and U ions to fluences in the range 5×10 10 –1×10 12 cm −2 have been investigated by means of selective chemical etching (SCE), atomic force microscopy (AFM) and computer simulation. SCE data on the InP crystals show the formation of the two-layer system of tracks differing by the matrix disorder degree...
We studied nanopores and nanoclusters formation in thermally oxidized silicon wafers (SiO 2 /Si) by means of ion-beam technique. RBS, SEM, TEM and TED were used to characterize the SiO 2 layers after the ion-beam processing. Nanopores were formed by high-energy Kr ions irradiation followed by chemical etching of latent tracks zones in SiO 2 matrix. Holes with diameters of ∼10–15nm...
Silicon layers of 150nm thickness supersaturated with indium up to ~5at% were prepared by multiple energy ion implantation. A redistribution of the implanted impurities caused by post-implantation annealing and following irradiation with swift Bi ions has been observed by means of Rutherford backscattering spectrometry in channelling configuration (RBS/C). It is demonstrated by TEM that the thermal...
Damage production was studied in 710MeV Bi and 1.3GeV U ions irradiated single-crystalline germanium by means of transmission electron microscopy and selective chemical etching. The formation of discontinuous tracks was registered in the depth region of high electronic energy loss of the incident ions. The observed features of discontinuous track formation in Ge are described within the fluctuation...
Optical properties of undoped and nitrogen-doped ZnSe/GaAs epilayers grown by MOVPE were investigated by using CW He-Cd laser excitation or by pulsed N 2 -laser radiation in the temperature range between 10 and 300 K and at excitation intensities in the range of I exc = 10 -1 -10 6 W/cm 2 . The presence of deep donor states with an ionization...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.