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SiO 2 layers thermally grown on Si wafers were irradiated with swift heavy ions in the energy range of (20–710) MeV. Subsequent chemical etching in 4% HF for 6 min produced conical pores with diameters from ∼20 to ∼80 nm in the SiO 2 layers. We have calculated radii and lifetime of the molten regions in the SiO 2 layers and compared them with the pore diameters and diameter...
Track formation processes in InP and GaAs crystals irradiated with swift Bi and U ions to fluences in the range 5×10 10 –1×10 12 cm −2 have been investigated by means of selective chemical etching (SCE), atomic force microscopy (AFM) and computer simulation. SCE data on the InP crystals show the formation of the two-layer system of tracks differing by the matrix disorder degree...
Implantation of N ions with doses of 3×1016 and 3×1017cm-2 and energies of 100keV into semiinsulating (100) GaAs substrates has been performed in order to synthesize the GaN compound. The samples have been annealed in a furnace at 750°C for 30min in N gas flow or under GaAs powder and then characterized by 300 and 77K cathodoluminescence, infrared reflection, Raman spectroscopy and secondary ion mass...
We studied nanopores and nanoclusters formation in thermally oxidized silicon wafers (SiO 2 /Si) by means of ion-beam technique. RBS, SEM, TEM and TED were used to characterize the SiO 2 layers after the ion-beam processing. Nanopores were formed by high-energy Kr ions irradiation followed by chemical etching of latent tracks zones in SiO 2 matrix. Holes with diameters of ∼10–15nm...
Silicon layers of 150nm thickness supersaturated with indium up to ~5at% were prepared by multiple energy ion implantation. A redistribution of the implanted impurities caused by post-implantation annealing and following irradiation with swift Bi ions has been observed by means of Rutherford backscattering spectrometry in channelling configuration (RBS/C). It is demonstrated by TEM that the thermal...
Damage production was studied in 710MeV Bi and 1.3GeV U ions irradiated single-crystalline germanium by means of transmission electron microscopy and selective chemical etching. The formation of discontinuous tracks was registered in the depth region of high electronic energy loss of the incident ions. The observed features of discontinuous track formation in Ge are described within the fluctuation...
The electrical and structural properties of Si-implanted GaAs (with the ion energy of 100keV and the dose of 2x10 13 cm -2 ) after high intensity co-implantation of As ions (with the energy of 150keV, current density of 80μA/cm 2 and implantation times up to 20s) and following furnace annealing have been investigated. Co-implantation of As ions in self-annealing regime...
Rutherford-backscattering spectrometry, X-ray double-crystal diffractometry, reflection electron diffraction and Raman spectroscopy were used to study semi-insulating GaAs(100) crystals implanted with a high current density Ar + ion beam. The crystal structure of the implanted layers is determined by the fluence and current density of the incident ion beam. Dynamic annealing of radiation defects...
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