The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, using variation aware device simulation, we study the local device variability and mismatch as affected by statistical variation resulting from differing backplane doping options in fully depleted SOI transistors. It is seen that discrete random doping effects associated with the choice of doping has a direct effect on mismatch, resulting in increased mismatch with larger channel doping...
Local statistical variability (mismatch) is very important in advanced CMOS technologies critically affecting, among others, SRAM supply and holding voltages, performance and yield. TCAD simulation of statistical variability is essential for identification of variability sources and their control in the technology development and optimization. It also plays an important role in the development of...
Predictive TCAD tool is crucial for several reasons such as to provide pre-silicon data, shorten the technology development cycle and reduce the fabrication cost. In this paper, advanced 3D TCAD process and device simulations is used to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed...
The impacts of FinFET channel and extension S/D region implantations on relevant device parameters such as electrostatic control and Vth mismatch (MM) are investigated. We used 3D TCAD process and device simulations to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed using diffusion, activation...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.