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The dependence of mid-gap and border trap content in SiO2:Si interfaces on oxidation rate in thermally oxidized n-type 4H-SiC was studied using a modified C-V hysteresis method. The minimum deep trap content oxidation conditions where found. It was also shown that the process of post metallization annealing further decreased the density of slow-switching traps in all cases.
A new method of activating the backside Emitter of an IGBT or a freewheeling Diode will be introduced. A high power UV Laser is used to activate a 1, 5 cm × 1, 5 cm area with one single laser shot. This allows a process improvement for thin wafer for IGBT and Diodes in the 600 V - 1200 V range. The process is a major step in further shrinking the device thickness and thereby reducing the on state...
The concept of controlled injection of backside holes (CIBH) is a novel and path breaking method for the optimization of the electrical characteristics of diodes. Buried p-doped layers at the cathode side of the diode inject holes in the base region during reverse recovery. Due to this injection the snap-off of the diode can be suppressed effectively. The main intention of this paper is to take advantage...
For chips with vertical flow of electrical current, an ohmic contact and/or emitter on the backside of the wafer are required. The formation of this electrical contact can be done using a laser annealing method in overlapping mode. Test on bare wafers and on productive chips were carried out using an excimer laser (lambda = 308 nm) with a laser energy density of more than 2 J/cm2 and a laser pulse...
Integrated circuits in safety critical applications like airbag or ABS have high quality requirements. During production of these chips the control of the quality must be applied down to each single process step. If the single wafer process is a RTP step the electrical power used to heat up the wafer can be tracked to monitor the system behaviour. In combination with other parameters like chamber...
In this article, the successful application of rapid thermal oxidation (RTO) with steam ambient for the selective oxidation of high aluminum containing embedded AlGaAs layer for the formation of current aperture in VCSELs is reported. The steam generation is achieved by the pyrogenic steam generation approach in which hydrogen and oxygen gas mixture is converted into steam by autoignition. Comparing...
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