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We have proposed a single metal/dual high-k gate stack for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The threshold voltage is controlled by the dual high-k dielectrics, such as MgO- and Al2O3-containing HfSiON for n- and p-type MISFETs, respectively. The gate profile is precisely controlled by taking advantage of a common gate electrode, which...
Practical and manufacturable solutions for metal gate/dual high-k CMOS integration are presented. In order to overcome the difficulties of threshold voltage control of metal gate/high-k gate stack especially for gate-first integration, several material designs have been proposed so far. These include different metal gate materials and different high-k materials which are separately used in nMOS and...
An advanced scalable Cu damascene process was developed using self-assembled porous silica with tetramethylcyclo-tetrasiloxane (TMCTS) treatment and selective electroless plating of Cu barrier. It is found that the TMCTS vapor treatment could recover process-induced damages after plasma ashing and chemical mechanical polishing, resulting in no line-width dependence of the effective dielectric constant...
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