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A finite element-based simulation approach is used to predict stress evolution resulting from electromigration-induced diffusion. A diffusion-mechanical coupled model is developed where the electromigration and stress-induced diffusion is coupled to the mechanical equilibrium with an introduction of the electromigration induced inelastic strain. A crystal plasticity constitutive model is developed...
Electromigration (EM) in solder joints has become a critical reliability issue with the development of electronic industry. This paper studied two different failure modes during EM testing: atom migration dominated failure and crack dominated failure. Experimental study on EM was carried out in a typical testing circuit subjected to different current and environment temperature. Here, two different...
This paper studies the microstructure effects on electromigration in lead-free solder joints in wafer level chip scale package (WL-CSP). It is an extension of an earlier isotropic model [1]. The three dimensional finite element model for solder joints is developed and analyzed in ANSYS®. A sub-modeling technique combined with an indirect coupled electrical-thermal-mechanical analysis is utilized to...
A finite element model which includes electromigration, thermomigration, stress migration and concentration diffusion is established to study the mass diffusion phenomenon. Numerical experiment is carried out to obtain the electrical, thermal, stress and atomic concentration fields of the sweat and through silicon via (TSV) structure under high current density load. The effectiveness of the electromigration...
This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through a numerical approach. The driving force for electromigrationinduced failure includes the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient, which were neglected in many of the existing studies on electromigration. The parameter study...
This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through numerical approach. The electronic migration formulation that considers the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient has been developed. The parameter study for the Al line geometry with different width and...
This paper proposes a new prediction method for electromigration induced void generation of solder bumps in a wafer level chip scale package (WL-CSP). The methodology is developed based on discretized residual weight method (RWM) in a user-defined finite element analysis (FEA) framework to solve the local electromigration governing equation with the variable of atomic concentration. The local solution...
This paper proposes a parametric simulation plan for UBM geometry with different UBM rim angles, diameters and thicknesses. The parameter plan for the solder bump with different heights and diameters, and different shapes is also investigated. The goal of this study is to understand the impact of the die shrinkage on solder joint reliability under electromigration failure, and to optimize the UBM...
This paper studies the numerical simulation method for electromigration void incubation and afterwards void propagation based on commercial software ANSYS Multi-physics and FORTRAN code. The electronic migration formulation considering the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic concentration gradient has been developed for the electromigration...
An enhanced finite element modeling methodology based on commercial software ANSYS Multi-physics and FORTRAN code is developed for the simulation of electromigration. The electronic migration formulation taking into account the effects of the atomic concentration gradient (ACG) has been developed to show the difference in the electromigration (EM) failure mechanisms. An improved algorithm of total...
This paper studies the numerical simulation method for electromigration in the solder joint of a chip scale package. The three dimensional electromigration finite element model for solder joint reliability is developed. Numerical experiments are carried out to obtain the electrical, thermal and stress fields with the migration failure under high current density loads. The indirect coupled analysis...
This paper studies the numerical simulation method for electromigration in IC device and solder joint in a package under the combination of high current density, thermal load and mechanical load. The three dimensional electromigration finite element model for IC device/interconnects and solder joint reliability are developed and tested. Numerical experiment is carried out to obtain the electrical,...
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