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Ag-copper dual-layer substrate design is presented. The Ag cladding on the copper substrate is a buffer to deal with the large mismatch in coefficient of thermal expansion (CTE) between semiconductors such as Si (3 ppm/degC) and Cu (17 ppm/deg C). Ag is chosen because of its low yield strength, only one-tenth of that of Cu and one-third of the popular Sn3.5Ag solder. Other advantages are high electrical...
A fluxless bonding process between a 2" silicon wafer and a 2" x 2" molybdenum substrate with Sn-rich solder has been successfully developed. To achieve high quality joints, flux is avoided during bonding process. The flux or flux residues could be easily trapped in the joint, resulting in voids and uneven solder layer. Flux residues, if not completely removed, could also cause potential...
We report a wafer-to-wafer bonding technique with solder as the bonding layer but without the use of any flux. This fluxless or flux-free feature makes void-free and uniform bonding layer possible. If flux were used as in the case of typical soldering processes, the flux or flux residues could be easily trapped in the joint, resulting in voids and uneven solder layer. Flux residues, if not completely...
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