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We investigate the bow of free standing (0001) oriented HVPE grown GaN wafers and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the wafers. The origin of the stress gradient and the curvature is attributed to the inclination of edge threading dislocations (TDs) with respect to original [0001] GaN wafer or boule growth direction...
Tunnel junctions in the III-Nitride system have the potential to revolutionize GaN device design and capabilities. However, the high doping densities required and difficulty in activating buried p-GaN prevent widespread use. We combine MOCVD and MBE growth techniques to produce GaN tunnel junction devices with a total device series resistance as low as 1.5 × 10−4 Ω cm2. III-Nitride edge emitting lasers...
Growth of InGaN/GaN light-emitting devices on nonpolar planes offers a viable approach to eliminating the issues associated with polarization-related electric fields present in c-plane III-nitride heterostructures. Although progress in device performance has been rapid since the introduction of high-quality free-standing nonpolar substrates, a full appreciation of the materials challenges unique to...
We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.
We present the effects of partial strain relaxation on the optical properties in lattice mismatched semipolar (1122) InGaN using polarization-dependent photoluminescence measurements to probe the strain dependent band mixing of the valence bands.
The use of nonpolar or semipolar AlGaN for UV-C diode lasers avoids the compromises in gain, injection efficiency, and ohmic losses imposed on c-plane lasers by the unusual valence band structure of AlGaN alloys.
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