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We been developing a micro spectrometer with embedded system customizable for high sensitive 64 pixels QDs-QW photodetectors linear array. Based on silicon substrate through silicon via (TSV) technology, the readout circuit chip and the photodetector linear array have been packaged on 2.5D/3D integration. The high-speed data acquisition and processing analysis unit system have designed and optimize...
Spintronics strives to revolutionize conventional electronics by integrating magnetic materials with semiconductor devices, such as the spin field effect transistor (SFET)[1], which not only improve the capabilities of electronic devices, but develop new functionalities. For electrodes of spin injection and detection in SFET device, half metallic Fe3O4 is an attractive candidate because its high Curie...
Very long wave (> 14μm) infrared quantum cascade detectors based on III-V materials are presented. Thanks to the optimum design of electron transport mechanism, high detectivity is obtained without decreasing device responsivity. For the 14.2 μm QCD, a work temperature up to 82K is obtained with a peak responsivity about 0.95 mA/W and detectivity of 1×108 Jones. Peak responsivities is 2.34 mA/W...
In this paper we report the novel assembly method of a biosensor unit based on 64 pixel photodetector array with a proprietary semiconductor quantum dots (QDs) quantum well (QW) hybrid structure. There is significantly lower dark current for optimized high sensitivity detector. The capacitive trans-impedance amplifier (CTIA)-correlated double sampling (CDS) readout circuit can readout weak optical...
We have designed and developed a field deployable biosensor unit based on a novel proprietary quantum dots-quantum well hybrid structure. We analyzed in detail the detection sensitivity and in particular weak light detection and analysis of the semiconductor optoelectronic device. We designed a readout circuit and a data processing unit to handle the response signal. The sensor unit is equipped with...
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
We report an advanced InP/InGaAs double heterojunction bipolar transistor technology using aggressive scaling in device layout and epitaxial stack. The device employs a 220 Aring highly doped base and a 1200 Aring collector designed to support current densities in excess of 12 mA/mum2. Transistors with emitter width of 0.25-mum have exhibited simultaneous measured fT and fmax frequencies in the...
In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest...
Maximizing In composition in the channel structures of high-electron-mobility transistors on InP is one important aspect of achieving devices capable of operating beyond 300 GHz. In this article, we compare dc and rf performance results from two variations of one such device design, incorporating a composite-channel structure comprised of InAs clad by InP-lattice-matched InGaAs. The only difference...
We report InP-based double heterojunction bipolar transistors (DHBTs) with emitter widths of 0.25 mum and RF performance of fT = 400 GHz and fmax >500 GHz. The HBT structure consists of an InP emitter with an abrupt emitter-base interface, a 300 compositionally graded InGaAs base region, and a 1200Aring collector. The scaled devices reported here have been integrated with a planar, multi-level...
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