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In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled...
Surface plasmon resonance mediated by Gold (Au) nanoparticles (NPs) was employed to enhance the ultraviolet (UV) response of p-Si/n-ZnO nanorod (NR) heterojunction photodetectors (HPDs). In the ZnO NRs with Au NP covering, the photoluminescence spectrum shows that the band-to-band emission of ZnO (384 nm) is increased by a magnitude of 3, and the deep-level emissions (450–700 nm) are drastically decreased...
Well-defined Zn0.9Li0.1O nanorods were hydrothermally synthesized at the low temperature of 90°C on the sputtered ZnO seed layer in different thickness, 20 nm and 50 nm. The x-ray diffraction patterns of both samples with a single diffraction peak (002) showed the same wurtzite hexagonal structure. The length and diameter of the nanorods were both increased from 1.12 μm to 1.47 μm and 95 nm to 113...
Bi4Ti2.96Ta0.04O12 (BTTO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel method. The effects of Ta-substitution and annealing temperature (500–800 °C) on the microstructure and ferroelectric properties of Bi4Ti3O12 thin films were investigated. X-Ray diffraction analysis reveals that the intensities of (117) peaks are realitively broad and weak at annealing temperatures...
The influence of bonding pressure during low temperature direct metal bond formation between gold studs and electroplated copper joints respectively was evaluated. The findings obtained showed an optimum pressure where bond strength peaks before degrading at further increase in bond pressure. Furthermore, it was found that the increase in bond strength does not correspond to a relative dilation of...
High quality InSb and InSbN alloys were grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. Low temperature photoluminescence spectra of InSb epilayers revealed that in addition to the main band-to-band emission around 5.4 μm, an emission peak around 5.87 μm was also be observed. Our results indicate that the low energy emission peak was originated from the antisite SbIn defects...
The electrolessly plated Ni-P has been extensively studied due to its coating uniformity, selectivity and low coating stress. However, the use of lead-free solders accelerates interfacial reaction because its higher melting points and higher Sn content than the conventional Pb-Sn solders. In this work, we developed a ternary electroless Ni-Sn-P (7~8 wt.% of P and 1.4 wt.% of Sn) alloy to be used as...
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