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In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic integrated circuits through CMOS photonics technologies. The introduction of high-mobility channel materials, which is promising for achieving high-performance MOSFETs, are also beneficial to photonics for off-chip/on-chip optical interconnection and bio/medical sensors. As for SiGe...
Efficiency droop remains a significant problem to be overcome if the performance of LEDs for solid state lighting is to be improved. As more cost effective substrates such as silicon wafers are used on which to grow the LED active layers, the overall output efficiency and efficiency droop at high drive currents need to be monitored and better understood. This paper investigates the droop effect at...
We present a 3.3kW on-vehicle battery charger (OBC) for plug-in hybrid electrical vehicles and battery electric vehicles. The OBC is developed with a semi-bridgeless front-end PFC boost converter followed by a ZVS full bridge DC-DC converter. The performance of the PFC boost is analyzed and measured using different switching power devices. The test data is measured in the same system, at the same...
Following a review of the key power-switch requirements and the fundamental limitations of silicon as a material, this paper describes the technical issues and the reasons that motivated the development of commercially available Schottky diodes and MOSFETs in SiC. In the second part, the paper analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and...
Low cost wafer-level chip-scale vacuum packaging (WLCSVP) imposes unique constraints on potential implementation of through-silicon vias (TSVs). A WLCSVP requires a relatively thick substrate to prevent mechanical failure. Two approaches for integrating TSVs in thick silicon wafers have been successfully demonstrated. Both approaches enable TSV formation from the backside of a device wafer and are...
This paper investigates the problem of securing k source symbols transmission in a network with side information to an adversary who can obtain k' source symbols, eavesdrop μ channels and contaminate d channels. We characterize the security performance of the new model by relative network generalized Hamming weight (RNGHW) of a linear code and a subcode with respect to network error correction (NEC)...
We present, for the first time, a MEMS-based test methodology that potentially enables elevated-temperature mechanical tensile testing of nano- and micro-scale samples within a SEM or TEM (T > 500degC). Importantly, the test methodology allows for the samples to be fabricated separately from the MEMS-apparatus, a significant advancement from other test devices developed by some of the present authors...
Polymer thin-film transistors (PTFTs) based on MEH-PPV semiconductor are fabricated by spin-coating process and characterized. Gate-bias and drain-bias stress effects at room temperature are observed in the devices. The saturation current decreases and the threshold voltage shifts toward negative direction upon the gate-bias stress. However, the saturation current increases and the threshold voltage...
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