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In this paper, a novel three-dimensional (3D) microelectrode integrated with micro and nano architectures has been developed to enhance the property of amperometric microsensor. By silicon bulk micromachining technology, a 3D micrometer-scale pyramidal micropool array (PMA) has been fabricated on working electrode surface. The PMA redistributes electric field strength over working electrode surface...
Face-to-face stacking of wafer-on-wafer is demonstrated successfully using bump-less Cu-Cu bonding. Using self-assembled monolayer passivation and in-situ desorption, Cu-Cu bond is enhanced in shear strength and bonding uniformity. Excellent specific contact resistance of 0.30 Ω.μm2 is obtained. Continuous daisy chain of at least 6,000 contacts at 15μm pitch is connected successfully. This provides...
3D integration by TSV approach is a very hot topic now as an enabling technology for 3D wafer-level packaging and 3D IC. Re-distribution layer (RDL) process becomes more critical on high volume Cu (TSV) wafer because of Cu thermal stress effect. Fine pitch low temperature RDL is required in 3D packaging and 3D IC integration. We develop fine pitch (5μm space/5μm width) single and dual damascene processes...
3D integration by TSV approach is a very hot topic now as an enabling technology for 3D wafer-level packaging and 3D IC. Re-distribution layer (RDL) process becomes more critical on high volume Cu (TSV) wafer because of Cu thermal stress effect. Fine pitch low temperature RDL is required in 3D packaging and 3D IC integration. We develop fine pitch (5µm space/5µm width) single and dual damascene processes...
Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality [1]. Many challenges arise from the third dimension to successfully achieve excellent electrical and mechanical interconnection by wafer bonding approach. In this work, face-to-face (F2F) stacking of wafer-on-wafer (WoW) is successfully demonstrated...
3D integration by means of face-to-face (F2F) stacking of wafer-on-wafer (WoW) is successfully demonstrated using bump-less Cu-Cu bonding on 200 mm wafers. Cu surface topology is optimized and carefully cleaned prior to bonding. Bonded Cu structures provide sufficient mechanical strength to sustain shear force during wafer thinning. Excellent specific contact resistance of ~0.34 Ω.μm2 is obtained...
In the present study, 56 soil apparent electrical conductivity(ECa) profiles, which inversed by the procedure that combine the EM38 linear model with Tikhonov regularization from aboveground EM38 measurements, were selected as the datum source of 3D spatial variability. First, the horizontal and vertical variogram were analyzed, respectively. Then, Combining the variograms, a 3-D an isotropic variogram...
Limited battery power for wireless devices demands improvement in power efficiency while enhancing system performance. Traditional semiconductor scaling faces challenges to meet this requirement. 3D integration of multiple chips using through silicon via (TSV) is one of the technologies that can extend the performance scaling trend. However, the semiconductor industry will need to overcome many technology...
One of challenge for the 3D integration by the TSV approach is the electroplating. Electroplating quality and time are important parameters for TSV cost and application. Solid Cu filling TSV (Through Si Via) with via diameter 20 μm and 65μm depth is achieved by the DC (directly current) electroplating within 40 minutes on 8 inch wafer.
In the current 3D integration technology, the control of wafer warp is needed to ensure uniform photolithography, good bonding areas and other major processes that requires flat wafer surface. In this paper, we found out that the wafer warpage was increased with increasing TSV density. The highest wafer warpage was observed after Cu annealing base on step by step warpage monitor. Wafer warpage reduction...
The three-dimensional (3D) open boundary eddy current field induced by heavy current flowing in the coils and winding leads in large power transformers is calculated. The eddy current loss and local overheating problem in the tank wall and in the ascending flange of bushings are analyzed and reported in this paper. The effectiveness of a magnetic by-pass plate near the coil ends for reducing the eddy...
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