The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For Solid-State Drive (SSD) applications cycling endurance of NAND flash is a critical challenge. In this work the endurance reliability of BE-SONOS NAND is thoroughly examined. Using dual CV/IV tests the impact of interface state (Dit) generation/annealing and real charge trapping (Q) on the endurance degradation has been clearly identified. For BE-SONOS with pure thermal oxide O1, the endurance...
Floating gate (FG) devices using barrier-engineered (BE) tunneling dielectric have been studied both theoretically and experimentally. Through WKB modeling the tunneling efficiency of various multi-layer tunneling barriers can be well predicted. Experimental results for FG devices with oxide-nitride-oxide (ONO) U-shaped barrier are examined to validate our model. Furthermore, a large-density array...
High speed array architecture and cell optimization in the Uniform Channel Program and Erase (UCPE) floating gate 2 transistor (2T)-embedded flash cell (eFlash) are investigated. It is important to optimize select gate (SG) channel length from 2T-eFlash test array when CG flash device width/length and SG length are pre-determined by other constraints. SG-punch through (PT) driven Gate Disturb (GD)...
This paper will discuss how the evildoers use communication technology to commit the crime such as the crime facts and crime techniques. The analysis will be focused on the security of Internet phone and organize a prevention method of Internet phone call attack and the attention points of setting up a Internet phone. At the same time, the importance of digital evidence and digital forensics will...
Aging effects (such as Negative Bias Temperature Instability (NBTI)) can cause the temporal degradation of threshold voltage of transistors, and have become major reliability concerns for deep-submicron (DSM) designs. Meanwhile, leakage power dissipation becomes dominant in total power as technology scales. While multi-threshold voltage assignment has been shown as an effective way to reduce leakage,...
With the challenges of growing functionality and scaling chip size, the possible performance improvements should be considered in the earlier IC design stages, which gives more freedom to the later optimization. Potential slack as an effective metric of possible performance improvements is considered in this work which, as far as we known, is the first work that maximizes the potential slack by retiming...
Although planar floating gate (FG) device using high-K IPD has been proposed, our study indicates that out tunneling through IPD due to the high electric field is inevitable, leading to programming/erasing saturation. Moreover, charge trapping in IPD is a major concern. In this work, we propose a completely different approach - using a trapping IPD for storage. Our concept is to combine the merits...
Abnormal Gm degradation and GIDL current in the Uniform Channel Program and Erase (UCPE) floating gate 2 transistor (2T)-embedded flash cell (eFlash) is investigated. Severe charge trapping and de-trapping at the floating gate to junction overlap area lead to the endurance failure and cell current degradation. Control Gate (CG)-Select Gate (SG) Inter-junction trapping further degrades endurance and...
Power gating induced power/ground (P/G) noise is a major reliability problem facing by low power MPSoCs using power gating techniques. Powering on and off a process unit in MPSoCs will induce large P/G noise and can cause timing divergence and even functional errors in surrounding processing units. P/G noise is different from thermal or energy which is an accumulative effect. The noise level should...
SONOS devices using gate injection programming and erasing have better cycling endurance because the gate oxide is not stressed by P/E operations. This work studies the gate injection behavior in detail using the recently developed gate-sensing and channel-sensing (GSCS) technique. GSCS accurately locates the charge centroid during programming/erasing and reliability tests. For the first time, we...
Barrier engineered charge-trapping NAND flash (BE-CTNF) devices are extensively examined by theoretical modeling and experimental validation. A general analytical tunneling current equation for multi-layer barrier is derived using WKB approximation. The rigorously derived analytical form is valid for both electron and hole tunneling, as well as for any barrier composition. With this, the time evolution...
The reliability of MANOS devices with an oxide buffer layer (MAONOS) in between SiN trapping layer and high-K Al2O3 top dielectric is extensively studied. We conclude that the primary function of high-K Al2O3 is to suppress the gate electron injection during erase instead of increasing the P/E speed. As a result, inserting a buffer oxide only changes EOT but does not change the P/E mechanisms. On...
This work establishes an analytical model framework to account for the NBTI aging effect on statistical circuit delay distribution. In this paper, we explain how circuit NBTI mitigation techniques can account for this extra variability and further present the impact of statistical PMOS NBTI DC-lifetime variability on the product delay spread.
As technology scales, the aging effect caused by Negative Bias Temperature Instability (NBTI) has become a major reliability concern for circuit designers. On the other hand, reducing leakage power remains to be one of the design goals. Because both NBTI-induced circuit degradation and standby leakage power have a strong dependency on the input vectors, Input Vector Control (IVC) technique may be...
Degradation of device parameters over the lifetime of a system is emerging as a significant threat to system reliability. Among the aging mechanisms, wearout resulting from NBTI is of particular concern in deep submicron technology generations. To facilitate architectural level aging analysis, a tool capable of evaluating NBTI vulnerabilities early in the design cycle has been developed. The tool...
This paper carefully analyzes various charge-trapping NAND Flash devices including SONOS, MANOS, BE-SONOS, BE-MANOS, and BE-MAONOS. The erase mechanisms using electron de-trapping or hole injection, and the role of the high-k top dielectric (Al2O3) are critically examined. In addition to the intrinsic charge-trapping properties, the STI edge geometry in the NAND array also plays a crucial role in...
Sleep transistor (ST) insertion is a valuable leakage reduction technique in circuit standby mode. Fine-grain sleep transistor insertion (FGSTI) makes it easier to guarantee circuit functionality and improve circuit noise margins. In this paper, we introduce a novel two-phase FGSTI technique which consists of ST placement and ST sizing. These two phases are formally modeled using mixed integer linear...
BE-SONOS [1] is successfully integrated in a 0.13 mum NAND Flash technology. BE-SONOS device employs a bandgap engineered ONO barrier, which allows efficient hole tunneling erase and yet prevents the direct tunneling leakage during retention. BE-SONOS can overcome the fundamental limitation of the conventional SONOS, for which good data retention and fast erase speed cannot be simultaneously achieved...
A bandgap engineered SONOS with greatly improved reliability properties is proposed. This concept is demonstrated by a multilayer structure of O1/N1/O2/N2/O3, where the ultra-thin "O1/N1/O2" serves as a non-trapping tunneling dielectric, N2 the high-trapping-rate charge storage layer, and O3 the blocking oxide. The ultra-thin "O1/N1/O2" provides a "modulated tunneling barrier"...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.