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Hydro-Quebec has started a Smart Grid project in 2003. Among the different telecommunication technologies, Hydro-Quebec has chosen the Public Telephone Infrastructure for financial reasons. However, telecommunication metallic lines are potentially exposed to voltage induction caused by current circulating on nearby electric lines. Voltage-limiting devices are used to protect communications equipment...
We have developed 90nm In0.7Ga0.3As channel HEMTs, directly measured of DC and RF characteristics, and performed microwave modeling for both 90nm Si CMOS and HEMT for benchmarking logic performance for future design layout and process improvement.
In this paper, transient behavior of DTSCRs is captured and analyzed using high speed measurement with VFTLP. It is possible to use this data to properly design for CDM performance of final product while maximizing performance.
A simple and cost-effective single metal gate scheme was successfully demonstrated to form gate-all-around (GAA) nanowire FETs with optimized dual VT for low power CMOS applications. FUSI gate-induced stress effects were shown to be of great relevance to device performance. At an IOff of 20 pA/mum, superior IOn of 1180 and 405 muA/mum were obtained for NFETs and PFETs at a VDD of 1.2 V.
We propose one novel approach on engineering floating gate (FG) of Flash memory cell: carbon incorporation into polysilicon FG. This technique demonstrated improvement in retention and larger program/erase Vth window, especially for smaller capacitance coupling ratio cell which is important for future scaled Flash memory cells.
A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling. This new method uses accurate manifold de-embedding using electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The new extrinsic network accommodates feedback effects which are observed in high power transistors...
Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC Al shows a high WF and good thermal...
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