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In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly...
This work, for the first time, estimates the influence of intrinsic-parameter fluctuations consisting of the metal-gate work-function fluctuation (WKF), the oxide-thickness fluctuation (OTF), the process-variation effect (PVE), and the random-dopant fluctuation (RDF) on 16-nm-gate complementary metal oxide semiconductor (CMOS) devices and circuit. Experimentally calibrated 3D device / circuit coupled...
In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height / the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n- and p-type current...
The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σIoff/σIon are drawn; the device with high AR and large number of silicon fin can suppress the WKF. The triple-fin FinFET (AR = 2) is superior to triple-fin tri-gate...
This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold-voltage fluctuation (??Vth) ; however, the...
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