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This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have...
In this paper we present the design, measurements, simulation, and modelling of a flexible textile loop antenna. Using embroidering techniques, a stranded copper wire is integrated onto a textile substrate, which in turn can be part of a garment or wearable accessory. The targeted application is a textile antenna integrated into the sides of a messenger bag next to fully flexible a-IGZO TFT receiver...
This paper presents a fully integrated operational amplifier (OPAMP) with positive feedback fabricated in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) technology. The OPAMP is implemented by using a 5 µm nMOS a-IGZO TFT process, and is operated from a dc supply voltage of 6 V. The circuit relies on positive feedback in the input differential pair to improve gain...
This paper presents two Cherry-Hooper amplifiers for bendable analog radio-frequency electronic systems fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. The first circuit is a wideband single-stage Cherry-Hooper amplifier providing a voltage gain of 10.4 dB over a 3 dB bandwidth of 3.5 MHz and a gain-bandwidth product (GBP) of...
This paper presents a cascode amplifier for bendable analog and radio-frequency electronic systems in a flexible amorphous indium gallium zinc oxide (a-IGZO) TFT technology, featuring a minimum gate length of 5 µm. The design is optimized for large bandwidth. The circuit design was carried out with a MOSFET LEVEL=3 SPICE model template. The required model parameters were extracted from both DC and...
A 0.5V, 10MHz, 9mW image processor with 320 processing element (PE) SIMD and a 32bit CPU has been developed using 40-nm CMOS. High voltage clock distribution (HVCD) reduces the number of excessive hold buffers required in a 0.5-V logic circuit design, thereby reducing the area, delay, and energy of the SIMD by 14 %, 13%, and 6%, respectively. The 0.5-V SIMD with HVCD achieves an energy efficiency...
A novel Switched Resonant Clocking (SRC) scheme is proposed to solve two basic problems of the conventional resonant clocking, that is, power increase and clock waveform inability at the lower clock frequency region. The power increase prohibits widely-used dynamic frequency scaling (DFS) and the waveform instability hinders low-speed function tests. A test chip in 0.18 mum CMOS is manufactured and...
A flexible 12 cm times 12 cm EMI measurement sheet is developed to enable the measurement of the EMI distribution on the surface of the electronic devices by wrapping the devices in the sheet. The sheet includes 8times8 antenna array, 2V organic CMOS decoder, stretchable interconnects, and EMI detection LSI's (large scale integrations) in 0.18 mum CMOS. The distributed LSI's near the antennas enable...
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