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This paper presents a compact transistor model for circuit design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations...
This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79 kHz from a dc power of only 0.76 mW. One cascode amplifier provides a voltage gain of 25 dB, and a bandwidth of 220 kHz from a dc...
This paper presents an AM receiver implemented in a flexible a-IGZO TFT technology. The circuit consists of a four-stage cascode amplifier at the RF input, a detector based on a source follower, and a common-source circuit for the baseband amplification. The measured conversion gain is very flat against frequency and exceeds 15 dB for carrier frequencies ranging from 2 to 20 MHz, which covers a relevant...
This paper presents a cascode amplifier for bendable analog and radio-frequency electronic systems in a flexible amorphous indium gallium zinc oxide (a-IGZO) TFT technology, featuring a minimum gate length of 5 µm. The design is optimized for large bandwidth. The circuit design was carried out with a MOSFET LEVEL=3 SPICE model template. The required model parameters were extracted from both DC and...
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