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Inelastic thermal stress simulation was performed to evaluate effect of fiber cloths structures on thermal fatigue strength in through hole in PCB under cyclic thermal loads. Conclusions were shown as follows.
In conventional SiP (System in Package), several semiconductor chips had been 2D arranged in an interposer and a mother board. However, it is difficult to downsize and improve the performance of electronic devices due to that large area is occupied by the chips. Recently, 3D packaging technology has been investigated to reduce size of devices and to improve performance of semiconductor devices [1-11]...
Recently, the downsizing and high-performing semiconductor packages have been developed and 3D packaging has been spurred research into reliability of TSV (through silicon via) [l]-[9]. In conventional SiP (System in Package), several semiconductor chips had been arranged in a plate. It is difficult to correspond to downsizing and high-performing of electronic devices because that large area is occupied...
Through holes which were for electric signal communication were formed in printed circuit board. The surface of through hole was plated by thin metal and the irregularities were shaped on the free surface or on the interface due to hole-drilling process for making through holes in circuit board. Fracture of through hole was occurred by stress concentration due to its irregularity. In this study, inelastic...
Thermal stresses around void in TSV (Through Silicon Via) structure in 3D SiP were discussed under the conditions of device operation and reflow process by using FEM (Finite Element Method). In case of the condition of device operation, equivalent stress around void inside Cu TSV was estimated at around 100 MPa. It showed the low possibility for low cycle fatigue of Cu TSV under device operation because...
The stresses of TSV (Through Silicon Via) and Si chips in 3D-SiP were discussed with a large scale simulator based on FEM (Finite Element Method), ADVENTURECluster. In this study, the stacked layer structure of Si chips is modeled accurately. Thermal stress simulation for TSV structure in Si chips is carried out under thermal loads due to device operation and reflow process. In case of device operation,...
Recently, high density packaging technology has been developed to reduce size and improve performance of electronic devices [1–5]. Many electronic devices were mounted on printed circuit board (PCB) and electrical signals were carried on circuits to in-plane and on through holes to out-plane of PCB. PCB was formed by multilayer structure of conductive layer and insulated layer. In particular, evaluation...
In this study, the required heat transfer coefficient of heat sink is quantitatively shown by steady heat conduction simulation. Maximum principal stress of silicon and equivalent stress of the TSV are obtained from thermal stress simulation.
The relation between maximum temperature in Si chip and varied heat transfer coefficients of heat sink is shown in Fig. 5. Maximum temperature for device operation was assumed to be 85 °C. Heat transfer coefficient of heat sink at device operation is estimated to be 4.5W/m2K by quadratic approximation of least square method. Maximum temperature of 3D SiP was almost 85 °C and uniform temperature distribution.
The thermo-mechanical reliability of stacked die structures is a critical issue in 3D packaging. The assessment of the stress and the warpage of silicon dies in 3D stacked structures become important in achieving low-stress and low-warpage 3D packaging. However the parametric analyses of thermal stress and die-warpage by rigorous finite element analysis can be time consuming for 3D systems, since...
In the late 1990's, the technology that is stacked multiple silicon chips on the package was developed [1]. Then SiP (System in Package) constructed with CPU and memory into a package is appeared. Recently, downsizing and high-performing of semiconductor packages have been studied. In conventional SiP, several semiconductor chips had been arranged in a plate [2–6]. Therefore, it is difficult to correspond...
Recently, high density 3D packaging technology has been developed to reduce the size and improve the performance of semiconductor devices [1–10]. Through silicon vias (TSV) technique enabled downsizing of electronic devices and faster signal communication between semiconductor chips. The delay time of signal, which depended on circuit length, was reduced by direct communication with TSV as compared...
In order to improve electronics packaging design, it is important to evaluate the cooling performance and reliability of the electronics packaging structure of a product. To that end, it is necessary to predict the temperature, deformation, and stress distributions of the package under field conditions. In the case of a packaging structure comprising a flip-chip ball grid array package, a heat spreader,...
Optimun barrier height and impurity concentration for a power Schottky diode for maximizing rectifying efficiency are theoretically derived. For a low output voltage, 1.5 ~ 2 V as a DC-DC converter, the barrier height has an optimum value of about 17 times the thermal voltage and the impurity concentration has approximately 1 ?? 1016 cm-3, for n-type silicon. Schottky diodes with some kinds of barrier...
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